| PART |
Description |
Maker |
| RQ3E080BNTB |
Nch 30V 8A Middle Power MOSFET
|
ROHM
|
| RRQ020P03 |
Pch -30V -2A Middle Power MOSFET
|
ROHM
|
| RF4E100AJTCR |
Nch 30V 10A Middle Power MOSFET
|
ROHM
|
| QS8K2FRA QS8K2FRATR |
30V Pch Pch Middle Power MOSFET
|
ROHM
|
| SH8KA7GZETB |
30V Nch Nch Middle Power MOSFET
|
ROHM
|
| 2SCR514PFRA |
Middle Power Transistor (80V / 0.7A)
|
Rohm
|
| 2SAR533D 2SAR533P 2SAR533P13 |
PNP -3.0A -50V Middle Power Transistor
|
Rohm
|
| HP8MA2 |
30V Nch Pch Middle Power MOSFET
|
Rohm
|
| 3DG122 |
NPN Silicon High Frequency Middle Power Transistor
|
Shaanxi Qunli Electric
|
| FZT489TA FZT489QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SCR553P 2SCR553PT100 |
NPN 2.0A 50V Middle Power Transistor
NPN 2.0A 50V Middle Power Transistor
|
Rohm
|
